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NVMFWS020N06CT1G

MFR #NVMFWS020N06CT1G

FPN#NVMFWS020N06CT1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 9A (Ta), 28A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS020N06C
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance355pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Ta), 28A (Tc)
Maximum Drain to Source Resistance19.6 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.4W (Ta), 31W (Tc)
Maximum Pulse Drain Current181A
Maximum Total Gate Charge5.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge530pC
Typical Gate to Source Charge2.3nC