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onsemi

NVMFWS020N06CT1G

MFR #NVMFWS020N06CT1G

FPN#NVMFWS020N06CT1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 9A (Ta), 28A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
57129-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS020N06C
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance355pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Ta), 28A (Tc)
Maximum Drain to Source Resistance19.6 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.4W (Ta), 31W (Tc)
Maximum Pulse Drain Current181A
Maximum Total Gate Charge5.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge530pC
Typical Gate to Source Charge2.3nC