
NVMFWS020N06CT1G
MFR #NVMFWS020N06CT1G
FPN#NVMFWS020N06CT1G-FL
MFRonsemi
Part DescriptionN-Channel 60 V 9A (Ta), 28A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVMFS020N06C |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 355pF |
Input Capacitance Test Voltage | 30V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 9A (Ta), 28A (Tc) |
Maximum Drain to Source Resistance | 19.6 mOhm @ 4A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 20µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.4W (Ta), 31W (Tc) |
Maximum Pulse Drain Current | 181A |
Maximum Total Gate Charge | 5.8nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 530pC |
Typical Gate to Source Charge | 2.3nC |