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onsemi

NVMFWS014P04M8LT1G

MFR #NVMFWS014P04M8LT1G

FPN#NVMFWS014P04M8LT1G-FL

MFRonsemi

Part DescriptionP-Channel 40 V 12.5A (Ta), 52.1A (Tc) 3.6W (Ta), 60W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
100874-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS014P04M8L
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1734pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current12.5A (Ta), 52.1A (Tc)
Maximum Drain to Source Resistance13.8 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 420µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.6W (Ta), 60W (Tc)
Maximum Pulse Drain Current268A
Maximum Total Gate Charge26.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.8nC
Typical Gate to Source Charge5.6nC