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onsemi

NVMFWS005N10MCLT1G

MFR #NVMFWS005N10MCLT1G

FPN#NVMFWS005N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 18.4A (Ta), 108A (Tc) 8-SON T/R
Datasheet
99155-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS005N10MCL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4100pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current18.4A (Ta), 108A (Tc)
Maximum Drain to Source Resistance5.1 mOhm @ 34A, 10V
Maximum Gate to Source Threshold Voltage3V @ 192µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.8W (Ta), 131W (Tc)
Maximum Pulse Drain Current695A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC
Typical Gate to Source Charge11nC