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NVMFWD040N10MCLT1G
onsemi

NVMFWD040N10MCLT1G

MFR #NVMFWD040N10MCLT1G

FPN#NVMFWD040N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 100V 6.1A (Ta), 21A (Tc)
Datasheet
99153-Datasheet
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD040N10MCL
Lifecycle StatusActive (Unconfirmed)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance520pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current6.1A (Ta), 21A (Tc)
Maximum Drain to Source Resistance39 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 26µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 36W (Tc)
Maximum Pulse Drain Current78A
Maximum Total Gate Charge8.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC
Typical Gate to Source Charge1.7nC