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NVMFWD030N06CT1G
onsemi

NVMFWD030N06CT1G

MFR #NVMFWD030N06CT1G

FPN#NVMFWD030N06CT1G-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 60V 7A (Ta), 19A (Tc) 3.2W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
57128-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD030N06C
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance255pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current7A (Ta), 19A (Tc)
Maximum Drain to Source Resistance29.7 mOhm @ 3A, 10V
Maximum Gate to Source Threshold Voltage4V @ 13µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 23W (Tc)
Maximum Pulse Drain Current63A
Maximum Total Gate Charge4.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge540pC
Typical Gate to Source Charge1.7nC