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NVMFWD020N10MCLT1G
onsemi

NVMFWD020N10MCLT1G

MFR #NVMFWD020N10MCLT1G

FPN#NVMFWD020N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 100V 8.3A (Ta), 35A (Tc) 8-SON
Datasheet
99151-Datasheet
Quote Onlymore info
Multiples of: 6000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD020N10MCL
Lifecycle StatusActive (Unconfirmed)
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance789pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current8.3A (Ta), 35A (Tc)
Maximum Drain to Source Resistance20 mOhm @ 48A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3W (Ta), 54W (Tc)
Maximum Pulse Drain Current140A
Maximum Total Gate Charge10.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC
Typical Gate to Source Charge1.8nC