(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVMFSC0D9N04C
onsemi

NVMFSC0D9N04C

MFR #NVMFSC0D9N04C

FPN#NVMFSC0D9N04C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 48.9A (Ta), 313A (Tc) 8-SON T/R
Datasheet
130596-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFSC0D9N04C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6100pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current48.9A (Ta), 313A (Tc)
Maximum Drain to Source Resistance870 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation4.1W (Ta), 166W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge86nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge28nC