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NVMFS6H818NT1G

NVMFS6H818NT1G

MFR #NVMFS6H818NT1G

FPN#NVMFS6H818NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 20A (Ta), 123A (Tc) 8-SON
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS6H818N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3100pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Ta), 123A (Tc)
Maximum Drain to Source Resistance3.7 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage4V @ 190µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 136W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge15nC