(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVMFS6H818NT1G
onsemi

NVMFS6H818NT1G

MFR #NVMFS6H818NT1G

FPN#NVMFS6H818NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 20A (Ta), 123A (Tc) 8-SON
Datasheet
164574-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS6H818N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3100pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Ta), 123A (Tc)
Maximum Drain to Source Resistance3.7 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage4V @ 190µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.8W (Ta), 136W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge15nC