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NVMFS6H818NT1G
MFR #NVMFS6H818NT1G
FPN#NVMFS6H818NT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 80V 20A (Ta), 123A (Tc) 8-SON
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVMFS6H818N | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 1500 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 80V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 3100pF | 
| Input Capacitance Test Voltage | 40V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 20A (Ta), 123A (Tc) | 
| Maximum Drain to Source Resistance | 3.7 mOhm @ 20A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 190µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 3.8W (Ta), 136W (Tc) | 
| Maximum Pulse Drain Current | 900A | 
| Maximum Total Gate Charge | 46nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | 5-DFN (5x6) (8-SOFL) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 8nC | 
| Typical Gate to Source Charge | 15nC | 
