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NVMFS6B14NLT3G
onsemi

NVMFS6B14NLT3G

MFR #NVMFS6B14NLT3G

FPN#NVMFS6B14NLT3G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 11A (Ta), 55A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount, 5-DFN
Datasheet
100383-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS6B14NL
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance1680pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11A (Ta), 55A (Tc)
Maximum Drain to Source Resistance13 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 94W (Tc)
Maximum Pulse Drain Current140A
Maximum Total Gate Charge8nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge4.1nC