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onsemi

NVMFS5H663NLWFT1G

MFR #NVMFS5H663NLWFT1G

FPN#NVMFS5H663NLWFT1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 16.2A (Ta), 67A (Tc) 3.7W (Ta), 63W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
57110-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS5H663NLWF
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1131pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current16.2A (Ta), 67A (Tc)
Maximum Drain to Source Resistance7.2 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 56µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 63W (Tc)
Maximum Pulse Drain Current359A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge3.8nC