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onsemi

NVMFS5H610NLWFT1G

MFR #NVMFS5H610NLWFT1G

FPN#NVMFS5H610NLWFT1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 13A (Ta), 48A (Tc) 3.6W (Tc), 52W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
Datasheet
99147-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS5H610NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance880pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 48A (Tc)
Maximum Drain to Source Resistance10 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage2V @ 40µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 52W (Tc)
Maximum Pulse Drain Current243A
Maximum Total Gate Charge13.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC
Typical Gate to Source Charge2.6nC