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NVMFS5832NLT1G
onsemi

NVMFS5832NLT1G

MFR #NVMFS5832NLT1G

FPN#NVMFS5832NLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 21A (Ta) 8-SON T/R
Datasheet
100379-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS5832NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2700pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current21A (Ta)
Maximum Drain to Source Resistance4.2 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 127W (Tc)
Maximum Pulse Drain Current557A
Maximum Total Gate Charge51nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12.7nC
Typical Gate to Source Charge8nC