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NVMFS4C01NT1G
onsemi

NVMFS4C01NT1G

MFR #NVMFS4C01NT1G

FPN#NVMFS4C01NT1G-FL

MFRonsemi

Part DescriptionN-Channel 30 V 49A (Ta), 319A (Tc) 3.84W (Ta), 161W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
57041-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFS4C01N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive (NRND)
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type5-DFN (5x6) (8-SOFL)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance10144pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current49A (Ta), 319A (Tc)
Maximum Drain to Source Resistance900 µOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.84W (Ta), 161W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge139nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13nC
Typical Gate to Source Charge13nC