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NVMFD6H852NLWFT1G
onsemi

NVMFD6H852NLWFT1G

MFR #NVMFD6H852NLWFT1G

FPN#NVMFD6H852NLWFT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 80V 7A (Ta), 25A (Tc) 8-SON T/R
Datasheet
101053-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD6H852NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance521pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current7A (Ta), 25A (Tc)
Maximum Drain to Source Resistance25.5 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2V @ 26µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 38W (Tc)
Maximum Pulse Drain Current98A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.7nC
Typical Gate to Source Charge1.9nC