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NVMFD6H840NLWFT1G
onsemi

NVMFD6H840NLWFT1G

MFR #NVMFD6H840NLWFT1G

FPN#NVMFD6H840NLWFT1G-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) 80V 14A(Ta) 74A(Tc) Surface Mount, 8-DFN
Datasheet
57036-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD6H840NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance2002pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current14A (Ta), 74A (Tc)
Maximum Drain to Source Resistance6.9 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 96µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.1W (Ta), 90W (Tc)
Maximum Pulse Drain Current336A
Maximum Total Gate Charge32nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge5.1nC