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NVMFD5C680NLWFT1G
MFR #NVMFD5C680NLWFT1G
FPN#NVMFD5C680NLWFT1G-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 60V 7.5A (Ta), 26A (Tc) 8-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVMFD5C680NL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1500 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 350pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 7.5A (Ta), 26A (Tc) |
| Maximum Drain to Source Resistance | 28 mOhm @ 5A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.2V @ 13µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3W (Ta), 19W (Tc) |
| Maximum Pulse Drain Current | 57A |
| Maximum Total Gate Charge | 2nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC |
| Typical Gate to Source Charge | 1.2nC |