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NVMFD5C470NLWFT1G
onsemi

NVMFD5C470NLWFT1G

MFR #NVMFD5C470NLWFT1G

FPN#NVMFD5C470NLWFT1G-FL

MFRonsemi

Part DescriptionMosfet Array 40V 11A (Ta), 36A (Tc) 3W (Ta), 24W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
57030-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD5C470NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance590pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 36A (Tc)
Maximum Drain to Source Resistance11.5 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3W (Ta), 24W (Tc)
Maximum Pulse Drain Current110A
Maximum Total Gate Charge4nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.6nC
Typical Gate to Source Charge2.2nC