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NVMFD5875NLWFT1G
MFR #NVMFD5875NLWFT1G
FPN#NVMFD5875NLWFT1G-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 7A I(D), 60V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVMFD5875NL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 540pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 7A |
| Maximum Drain to Source Resistance | 33 mOhm @ 7.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.2W |
| Maximum Pulse Drain Current | 80A |
| Maximum Total Gate Charge | 20nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.8nC |
| Typical Gate to Source Charge | 1.64nC |