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NVMFD5875NLT1G
onsemi

NVMFD5875NLT1G

MFR #NVMFD5875NLT1G

FPN#NVMFD5875NLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 60V 7A 8-SON
Datasheet
100705-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD5875NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance540pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7A
Maximum Drain to Source Resistance33 mOhm @ 7.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.2W
Maximum Pulse Drain Current80A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.8nC
Typical Gate to Source Charge1.64nC