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NVMFD5873NLT1G

NVMFD5873NLT1G

MFR #NVMFD5873NLT1G

FPN#NVMFD5873NLT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 60V 10A 8-SON T/R
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD5873NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1560pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10A
Maximum Drain to Source Resistance13 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W
Maximum Pulse Drain Current190A
Maximum Total Gate Charge30.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.8nC
Typical Gate to Source Charge4nC