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NVMFD5489NLWFT1G
MFR #NVMFD5489NLWFT1G
FPN#NVMFD5489NLWFT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel Array 60V 4.5A(Ta) 3W Surface Mount, 8-DFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVMFD5489NL |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4.5V, 10V |
FET Feature | Logic Level Gate |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 330pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 4.5A (Ta) |
Maximum Drain to Source Resistance | 65 mOhm @ 15A, 10V |
Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3W (Ta) |
Maximum Pulse Drain Current | 62A |
Maximum Total Gate Charge | 12.4nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 4.74nC |
Typical Gate to Source Charge | 1.3nC |