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NVMFD010N10MCLT1G
onsemi

NVMFD010N10MCLT1G

MFR #NVMFD010N10MCLT1G

FPN#NVMFD010N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET Array 100V 11.6A(Ta) 61A(Tc) 3.1W(Ta) 84W(Tc) Surface Mount, 8-DFN
Datasheet
99126-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMFD010N10MCL
Lifecycle StatusActive (Unconfirmed)
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1800pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current11.6A (Ta), 61A (Tc)
Maximum Drain to Source Resistance10.4 mOhm @ 17A, 10V
Maximum Gate to Source Threshold Voltage3V @ 97µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 84W (Tc)
Maximum Pulse Drain Current270A
Maximum Total Gate Charge26nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge4.9nC