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onsemi

NVMD6P02R2G

MFR #NVMD6P02R2G

FPN#NVMD6P02R2G-FL

MFRonsemi

Part DescriptionMOSFET 2P-CH 20V 4.8A 8SOIC
Datasheet
99396-Datasheet
Quote Only
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVMD6P02
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance1700pF
Input Capacitance Test Voltage16V
Maximum Continuous Drain Current7.8A (Ta)
Maximum Drain to Source Resistance33 mOhm @ 6.2A, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge4nC