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onsemi
NVLJWS070N06CLTAG
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVLJWS070N06CL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | 6-WDFN (2.05x2.05) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 160pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 4.4A (Ta), 11A (Tc) |
| Maximum Drain to Source Resistance | 62 mOhm @ 5A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 6µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.4W (Ta), 15W (Tc) |
| Maximum Pulse Drain Current | 31A |
| Maximum Total Gate Charge | 18nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2nC |
| Typical Gate to Source Charge | 2.5nC |