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NVLJWS022N06CLTAG
onsemi

NVLJWS022N06CLTAG

MFR #NVLJWS022N06CLTAG

FPN#NVLJWS022N06CLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 7.2A (Ta), 25A (Tc) 6-SON
Datasheet
99124-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLJWS022N06CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance440pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current7.2A (Ta), 25A (Tc)
Maximum Drain to Source Resistance21 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage2V @ 16µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.4W (Ta), 28W (Tc)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge7.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-WDFN (2.05x2.05)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge900pC
Typical Gate to Source Charge1.6nC