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NVLJWS011N04CLTAG
onsemi

NVLJWS011N04CLTAG

MFR #NVLJWS011N04CLTAG

FPN#NVLJWS011N04CLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 11A (Ta) 37A (Tc) 2.4W (Ta) 28W (Tc) Surface Mount, 6-WDFN
Datasheet
99122-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLJWS011N04CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance550pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 37A (Tc)
Maximum Drain to Source Resistance11 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage2V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 28W (Tc)
Maximum Pulse Drain Current129A
Maximum Total Gate Charge10.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-WDFN (2.05x2.05)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.6nC
Typical Gate to Source Charge1.9nC