
NVLJWD040N06CLTAG
MFR #NVLJWD040N06CLTAG
FPN#NVLJWD040N06CLTAG-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 60V 5.5A 6WDFNW
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVLJWD040N06CL | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | 2 N-Channel | 
| Drain Source Voltage | 60V | 
| Drive Voltage | 4.5V, 10V | 
| FET Feature | Standard | 
| FET Options | N/R | 
| FET Type | Array | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 340pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 5.5A (Ta), 18A (Tc) | 
| Maximum Drain to Source Resistance | 38 mOhm @ 5A, 10V | 
| Maximum Gate to Source Threshold Voltage | 2V @ 13µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 2.2W (Ta), 24W (Tc) | 
| Maximum Pulse Drain Current | 54A | 
| Maximum Total Gate Charge | 6nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | 6-WDFNW (2.2x2.3) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 600pC | 
| Typical Gate to Source Charge | 1.3nC | 
