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NVLJWD040N06CLTAG

MFR #NVLJWD040N06CLTAG

FPN#NVLJWD040N06CLTAG-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 60V 5.5A 6WDFNW
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLJWD040N06CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance340pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current5.5A (Ta), 18A (Tc)
Maximum Drain to Source Resistance38 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 13µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.2W (Ta), 24W (Tc)
Maximum Pulse Drain Current54A
Maximum Total Gate Charge6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-WDFNW (2.2x2.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge600pC
Typical Gate to Source Charge1.3nC