
NVLJWD040N06CLTAG
MFR #NVLJWD040N06CLTAG
FPN#NVLJWD040N06CLTAG-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 60V 5.5A 6WDFNW
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVLJWD040N06CL |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4.5V, 10V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 340pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 5.5A (Ta), 18A (Tc) |
Maximum Drain to Source Resistance | 38 mOhm @ 5A, 10V |
Maximum Gate to Source Threshold Voltage | 2V @ 13µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 2.2W (Ta), 24W (Tc) |
Maximum Pulse Drain Current | 54A |
Maximum Total Gate Charge | 6nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 6-WDFNW (2.2x2.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 600pC |
Typical Gate to Source Charge | 1.3nC |