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NVLJS053N12MCLTAG
MFR #NVLJS053N12MCLTAG
FPN#NVLJS053N12MCLTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 120V 4.8A (Ta) 620mW (Ta) Surface Mount, 6-UDFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NVLJS053N12MCL |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 120V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 520pF |
Input Capacitance Test Voltage | 60V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 4.8A (Ta) |
Maximum Drain to Source Resistance | 53 mOhm @ 5.2A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 30µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 620mW (Ta) |
Maximum Pulse Drain Current | 86A |
Maximum Total Gate Charge | 7.8nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 6-UDFN (2x2) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 1nC |
Typical Gate to Source Charge | 1.5nC |