(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVLJS053N12MCLTAG
onsemi

NVLJS053N12MCLTAG

MFR #NVLJS053N12MCLTAG

FPN#NVLJS053N12MCLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 120V 4.8A (Ta) 620mW (Ta) Surface Mount, 6-UDFN
Datasheet
99121-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLJS053N12MCL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage120V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance520pF
Input Capacitance Test Voltage60V
Life Cycle StatusActive
Maximum Continuous Drain Current4.8A (Ta)
Maximum Drain to Source Resistance53 mOhm @ 5.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 30µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation620mW (Ta)
Maximum Pulse Drain Current86A
Maximum Total Gate Charge7.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-UDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC
Typical Gate to Source Charge1.5nC