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NVLJS053N12MCLTAG

NVLJS053N12MCLTAG

MFR #NVLJS053N12MCLTAG

FPN#NVLJS053N12MCLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 120V 4.8A (Ta) 620mW (Ta) Surface Mount, 6-UDFN
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLJS053N12MCL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage120V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance520pF
Input Capacitance Test Voltage60V
Life Cycle StatusActive
Maximum Continuous Drain Current4.8A (Ta)
Maximum Drain to Source Resistance53 mOhm @ 5.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 30µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation620mW (Ta)
Maximum Pulse Drain Current86A
Maximum Total Gate Charge7.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC
Typical Gate to Source Charge1.5nC