NVJD4158CT1G
MFR #NVJD4158CT1G
FPN#NVJD4158CT1G-FL
MFRonsemi
Part DescriptionMOSFET N and P-Channel 30V 250mA (Ta) 880mA (Ta) Surface Mount, 6-TSSOP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVJD4158C |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V, ±12V |
| Input Capacitance | 20pF |
| Input Capacitance Test Voltage | 5V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 250mA (Ta), 880mA (Ta) |
| Maximum Drain to Source Resistance | 1.5 Ohm @ 10mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 100µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 270mW (Ta) |
| Maximum Pulse Drain Current | 500mA, 3A |
| Maximum Total Gate Charge | 1.5nC, 3.5nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
| Package Type | SC-88/SC70-6/SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 200pC, 650pC |
| Typical Gate to Source Charge | 300pC, 500pC |