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NVHL027N65S3F
onsemi

NVHL027N65S3F

MFR #NVHL027N65S3F

FPN#NVHL027N65S3F-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 75A (Tc) 595W (Tc) Through Hole, TO-247-3
Datasheet
57012-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVHL027N65S3F
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance7780pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current75A (Tc)
Maximum Drain to Source Resistance27.4 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage5V @ 3mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation595W (Tc)
Maximum Pulse Drain Current187.5A
Maximum Total Gate Charge227nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge87nC
Typical Gate to Source Charge67nC