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onsemi

NVH4L060N090SC1

MFR #NVH4L060N090SC1

FPN#NVH4L060N090SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 900V 46A(Tc) 221W(Tc) Through Hole, TO-247-4
Datasheet
140059-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVH4L060N090SC1
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-4
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage900V
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance1770pF
Input Capacitance Test Voltage450V
Maximum Continuous Drain Current46A (Tc)
Maximum Drain to Source Resistance84 mOhm @ 20A, 15V
Maximum Gate to Source Threshold Voltage4.3V @ 5mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation221W (Tc)
Maximum Pulse Drain Current211A
Maximum Total Gate Charge87nC
Maximum Total Gate Charge Test Voltage15V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge26nC
Typical Gate to Source Charge27nC