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onsemi

NVH4L045N065SC1

MFR #NVH4L045N065SC1

FPN#NVH4L045N065SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 55A (Tc) TO247-4
Datasheet
140409-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVH4L045N065SC1
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance1870pF
Input Capacitance Test Voltage325V
Life Cycle StatusActive
Maximum Continuous Drain Current55A (Tc)
Maximum Drain to Source Resistance50 mOhm @ 25A, 18V
Maximum Gate to Source Threshold Voltage4.3V @ 8mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation187W (Tc)
Maximum Pulse Drain Current197A
Maximum Total Gate Charge105nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge30nC
Typical Gate to Source Charge27nC