
NVH4L045N065SC1
MFR #NVH4L045N065SC1
FPN#NVH4L045N065SC1-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 55A (Tc) TO247-4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVH4L045N065SC1 | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 650V | 
| Drive Voltage | 15V, 18V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | +22V, -8V | 
| Input Capacitance | 1870pF | 
| Input Capacitance Test Voltage | 325V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 55A (Tc) | 
| Maximum Drain to Source Resistance | 50 mOhm @ 25A, 18V | 
| Maximum Gate to Source Threshold Voltage | 4.3V @ 8mA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 187W (Tc) | 
| Maximum Pulse Drain Current | 197A | 
| Maximum Total Gate Charge | 105nC | 
| Maximum Total Gate Charge Test Voltage | 18V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-247-4 | 
| Technology | SiC (Silicon Carbide Junction Transistor) | 
| Typical Gate to Drain Charge | 30nC | 
| Typical Gate to Source Charge | 27nC | 
