(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVH050N65S3F
onsemi

NVH050N65S3F

MFR #NVH050N65S3F

FPN#NVH050N65S3F-FL

MFRonsemi

Part DescriptionN-Channel 650 V 58A (Tc) 403W (Tc) Through Hole TO-247-3
Datasheet
57010-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVH050N65S3F
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance5404pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current58A (Tc)
Maximum Drain to Source Resistance50 mOhm @ 29A, 10V
Maximum Gate to Source Threshold Voltage5V @ 1.7mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation403W (Tc)
Maximum Pulse Drain Current145A
Maximum Total Gate Charge123nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge51.4nC
Typical Gate to Source Charge39.5nC