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NVF2955T1G
onsemi

NVF2955T1G

MFR #NVF2955T1G

FPN#NVF2955T1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 1.7A (Ta) SOT223 T/R
Datasheet
57006-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVF2955
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance492pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current1.7A (Ta)
Maximum Drain to Source Resistance170 mOhm @ 750mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current17A
Maximum Total Gate Charge14.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.2nC
Typical Gate to Source Charge2.3nC