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NVDS015N15MCT4G
onsemi

NVDS015N15MCT4G

MFR #NVDS015N15MCT4G

FPN#NVDS015N15MCT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 150V 10.5A (Ta), 61.3A (Tc) TO-252-3
Datasheet
99110-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVDS015N15MC
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2120pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current10.5A (Ta), 61.3A (Tc)
Maximum Drain to Source Resistance15 mOhm @ 29A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 162µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 107.1W (Tc)
Maximum Pulse Drain Current382A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge11nC