NVDD5894NLT4G
MFR #NVDD5894NLT4G
FPN#NVDD5894NLT4G-FL
MFRonsemi
Part DescriptionMosfet Array 2 N-Channel (Dual) Common Drain 40V 14A 3.8W Surface Mount DPAK-5
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVDD5894NL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 40V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 2103pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 14A (Ta), 64A (Tc) |
| Maximum Drain to Source Resistance | 10 mOhm @ 50A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.8W (Ta), 75W (Tc) |
| Maximum Pulse Drain Current | 324A |
| Maximum Total Gate Charge | 41nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK-5 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 11.3nC |
| Typical Gate to Source Charge | 6.9nC |