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NVD6416ANLT4G-VF01
onsemi

NVD6416ANLT4G-VF01

MFR #NVD6416ANLT4G-VF01

FPN#NVD6416ANLT4G-VF01-FL

MFRonsemi

Part DescriptionN-Channel 100 V 19A (Tc) 71W (Tc) Surface Mount DPAK-3
Datasheet
57004-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD6416ANL
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1000pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current19A (Tc)
Maximum Drain to Source Resistance74 mOhm @ 19A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation71W (Tc)
Maximum Pulse Drain Current70A
Maximum Total Gate Charge40nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.6nC
Typical Gate to Source Charge2.4nC