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NVD5C688NLT4G
onsemi

NVD5C688NLT4G

MFR #NVD5C688NLT4G

FPN#NVD5C688NLT4G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 17A (Tc) 18W (Tc) Surface Mount DPAK
Datasheet
56998-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD5C688NL
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance400pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current17A (Tc)
Maximum Drain to Source Resistance27.4 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation18W (Tc)
Maximum Pulse Drain Current77A
Maximum Total Gate Charge3.4nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.1nC
Typical Gate to Source Charge1.5nC