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NVD5C464NT4G
onsemi

NVD5C464NT4G

MFR #NVD5C464NT4G

FPN#NVD5C464NT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 16A (Ta), 59A (Tc) 3W (Ta), 40W (Tc) Surface Mount, TO-252-3
Datasheet
99109-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD5C464N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1200pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current16A (Ta), 59A (Tc)
Maximum Drain to Source Resistance5.8 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3W (Ta), 40W (Tc)
Maximum Pulse Drain Current310A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge6.2nC