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NVD5C454NT4G
MFR #NVD5C454NT4G
FPN#NVD5C454NT4G-FL
MFRonsemi
Part DescriptionSupervisor Push-Pull, Totem Pole 1 Channel SC-82AB
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVD5C454N | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 2500 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 40V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 1900pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 19A (Ta), 82A (Tc) | 
| Maximum Drain to Source Resistance | 4.2 mOhm @ 40A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 70µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Power Dissipation | 3.1W (Ta), 56W (Tc) | 
| Maximum Pulse Drain Current | 446A | 
| Maximum Total Gate Charge | 32nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | DPAK | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 6.6nC | 
| Typical Gate to Source Charge | 9.5nC | 
