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NVD5802NT4G
onsemi

NVD5802NT4G

MFR #NVD5802NT4G

FPN#NVD5802NT4G-FL

MFRonsemi

Part DescriptionN-Channel 40 V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
Datasheet
56985-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD5802N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5300pF
Input Capacitance Test Voltage12V
Life Cycle StatusObsolete
Maximum Continuous Drain Current16.4A (Ta), 101A (Tc)
Maximum Drain to Source Resistance4.4 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 93.75W (Tc)
Maximum Pulse Drain Current300A
Maximum Total Gate Charge100nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge15nC
Typical Gate to Source Charge18nC