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NVD5414NT4G-VF01
onsemi

NVD5414NT4G-VF01

MFR #NVD5414NT4G-VF01

FPN#NVD5414NT4G-VF01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 24A(Tc) 55W(Tc) Surface Mount, TO-252-3
Datasheet
100367-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD5414N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1200pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance37 mOhm @ 24A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation55W (Tc)
Maximum Pulse Drain Current75A
Maximum Total Gate Charge48nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11.3nC
Typical Gate to Source Charge4.8nC