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NVD5117PLT4G-VF01
MFR #NVD5117PLT4G-VF01
FPN#NVD5117PLT4G-VF01-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVD5117PL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active (NRND) |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4800pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 11A (Ta), 61A (Tc) |
| Maximum Drain to Source Resistance | 16 mOhm @ 29A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 4.1W (Ta), 118W (Tc) |
| Maximum Pulse Drain Current | 419A |
| Maximum Total Gate Charge | 85nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 28nC |
| Typical Gate to Source Charge | 13nC |