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NVD4806NT4G
onsemi

NVD4806NT4G

MFR #NVD4806NT4G

FPN#NVD4806NT4G-FL

MFRonsemi

Part DescriptionN-Channel 30 V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Surface Mount DPAK
Datasheet
56983-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD4806N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 11.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2142pF
Input Capacitance Test Voltage12V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11.3A (Ta), 79A (Tc)
Maximum Drain to Source Resistance6 mOhm @ 30A, 11.5V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.4W (Ta), 68W (Tc)
Maximum Pulse Drain Current150A
Maximum Total Gate Charge37nC
Maximum Total Gate Charge Test Voltage11.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge7nC