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NVD360N65S3T4G
onsemi

NVD360N65S3T4G

MFR #NVD360N65S3T4G

FPN#NVD360N65S3T4G-FL

MFRonsemi

Part DescriptionN-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount DPAK
Datasheet
100949-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVD360N65S3
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance756pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Tc)
Maximum Drain to Source Resistance360 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 200µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation83W (Tc)
Maximum Pulse Drain Current25A
Maximum Total Gate Charge16.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge4.6nC