(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NVC6S5A354PLZT1G
onsemi

NVC6S5A354PLZT1G

MFR #NVC6S5A354PLZT1G

FPN#NVC6S5A354PLZT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 4A (Ta) 1.9W (Ta) Surface Mount, TSOT-23-6
Datasheet
56981-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVC6S5A354PLZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance600pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4A (Ta)
Maximum Drain to Source Resistance100 mOhm @ 2A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.9W (Ta)
Maximum Pulse Drain Current16A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-CPH
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.4nC
Typical Gate to Source Charge1.6nC