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onsemi

NVBG160N120SC1

MFR #NVBG160N120SC1

FPN#NVBG160N120SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 1.2kV 19.5A (Tc) TO-263-8
Datasheet
96967-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVBG160N120SC1
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeD2PAK-7
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage20V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+25V, -15V
Input Capacitance678pF
Input Capacitance Test Voltage800V
Maximum Continuous Drain Current19.5A (Tc)
Maximum Drain to Source Resistance224 mOhm @ 12A, 20V
Maximum Gate to Source Threshold Voltage4.3V @ 2.5mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation136W (Tc)
Maximum Pulse Drain Current78A
Maximum Total Gate Charge33.8nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge9.6nC
Typical Gate to Source Charge11.6nC