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onsemi

NVBG060N090SC1

MFR #NVBG060N090SC1

FPN#NVBG060N090SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 900V 5.8A (Ta), 44A (Tc) TO-263-8
Datasheet
148885-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVBG060N090SC1
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeD2PAK-7
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage900V
Drive Voltage15V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance1800pF
Input Capacitance Test Voltage450V
Maximum Continuous Drain Current5.8A (Ta), 44A (Tc)
Maximum Drain to Source Resistance84 mOhm @ 20A, 15V
Maximum Gate to Source Threshold Voltage4.3V @ 5mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.6W (Ta), 211W (Tc)
Maximum Pulse Drain Current176A
Maximum Total Gate Charge88nC
Maximum Total Gate Charge Test Voltage15V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge27nC