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NVB25P06T4G
MFR #NVB25P06T4G
FPN#NVB25P06T4G-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVB25P06 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 800 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | P-Channel | 
| Drain Source Voltage | 60V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±15V | 
| Input Capacitance | 1680pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 27.5A (Ta) | 
| Maximum Drain to Source Resistance | 82 mOhm @ 25A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Power Dissipation | 120W (Tj) | 
| Maximum Pulse Drain Current | 80A | 
| Maximum Total Gate Charge | 50nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | D2PAK-3 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | N/A | 
| Typical Gate to Source Charge | N/A | 
