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NVB150N65S3F
onsemi

NVB150N65S3F

MFR #NVB150N65S3F

FPN#NVB150N65S3F-FL

MFRonsemi

Part DescriptionN-Channel 650 V 24A (Tc) 192W Surface Mount DPAK-3 (TO-263-3)
Datasheet
56977-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVB150N65S3F
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1999pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance150 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage5V @ 540µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation192W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge43nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge13nC